Robust SRAM Designs and Analysis by Jawar Singh PDF
By Jawar Singh
This publication presents a advisor to Static Random entry reminiscence (SRAM) bitcell layout and research to fulfill the nano-regime demanding situations for CMOS units and rising units, comparable to Tunnel FETs. considering that procedure variability is an ongoing problem in huge reminiscence arrays, this booklet highlights the preferred SRAM bitcell topologies (benchmark circuits) that mitigate variability, besides exhaustive research. Experimental simulation setups also are integrated, which hide nano-regime demanding situations resembling procedure edition, leakage and NBTI for SRAM layout and research. Emphasis is put during the ebook at the quite a few trade-offs for reaching a top SRAM bitcell design.
- Provides a whole and concise creation to SRAM bitcell layout and research;
- Offers strategies to stand nano-regime demanding situations comparable to technique version, leakage and NBTI for SRAM layout and analysis;
- Includes simulation set-ups for extracting varied layout metrics for CMOS know-how and rising devices;
- Emphasizes various trade-offs for reaching the very best SRAM bitcell design.
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Additional resources for Robust SRAM Designs and Analysis
2 V. 1 Fig. 14 Supply Voltage VDD dependency of SPNM and WTP proposed metrics provides better information compare to SNM at ultra low voltage and can be useful for stability analysis under subthreshold regime. 5VDD because of the two sides of the butterfly curve . 14 shows the dependence of power metrics SPNM and W T P on VDD for a standard 6T-SRAM bitcell. 5VDD . Thus, the proposed metrics dependency on VDD as shown in Fig. 14 will not limit the stability analysis and can be used at a very low voltage.
The SRRV of an SRAM bitcell can be defined as the difference between VDD and the value of the VCELL causing IBL to suddenly drop, as shown in Fig. 16. e. SRRV = 0), the SRAM bitcell is biased for a nominal read operation with BL, BLB, WL and VCELL all are biased at VDD . If the SRRV is greater than zero, it indicates that bitcell supply voltage (VCELL ) can be dropped below VDD without disturbing the bitcell state. Therefore, SRRV represents the maximum tolerable DC noise voltage at the bitcell supply before causing the destructive read operation.
5VDD . Thus, the proposed metrics dependency on VDD as shown in Fig. 14 will not limit the stability analysis and can be used at a very low voltage. 3 Bitline Measurement Design Metrics The conventional DC read and write static noise margin (SNM) metrics presented in the previous section have some major drawbacks such as inability to measure them in dense functional SRAM arrays due to metal spacing constraints and area overhead associated to provide switch array. As a result, it produces inadequate number of data points for failure analysis of large size cache memories.
Robust SRAM Designs and Analysis by Jawar Singh