Download PDF by M. S. Shur, A. Žukauskas (auth.), Michael S. Shur, Artūras: UV Solid-State Light Emitters and Detectors
By M. S. Shur, A. Žukauskas (auth.), Michael S. Shur, Artūras Žukauskas (eds.)
Infrared and visual gentle LEDs and photodetectors have chanced on various functions and became a really permitting know-how. The promise of strong nation lights has invigorated curiosity in white gentle LEDs. Ultraviolet LEDs and sunlight blind photodetectors signify the following frontier in strong country emitters and carry promise for lots of vital functions in biology, medi cine, dentistry, strong kingdom lights, screens, dense information garage, and semi conductor production. probably the most vital purposes is in sys tems for the identity of unsafe organic brokers. in comparison to UV lamps, UV LEDs have decrease energy intake, an extended lifestyles, compactness, and sharper spectral strains. UV LEDs promises numerous UV spectra and feature form and shape issue flexibility and rugged ness. utilizing traditional phosphors, UV LEDs can generate white mild with excessive CRI and excessive potency. If quantum cutter phosphors are built, white gentle new release via UV LEDs may perhaps develop into much more effective. Advances in semiconductor fabrics and in more desirable gentle extraction options ended in the improvement of a brand new new release of effective and pow erful seen high-brightness LEDs and we predict that comparable advancements could be accomplished in solid-state UV technology.
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Additional info for UV Solid-State Light Emitters and Detectors
Figure 9 shows the LED's optical output power and external quantum efficiency versus the forward current. 5%. 0 V at the forward current of 20 rnA. 2 mW was obtained for the wavelength of340 nm at the pulsed injection current of 110 rnA. The output power is almost linearly proportional to input current over the entire test range. This linearity is a reasonable indicator that heating was not a problem for the injection current levels used during testing. 62%. A lowering emission efficiency at higher input currents can be due to (i) electron leakage in p-AlGaN where nonradiative camer recombination is especially 2.
2 Simulation of Exciton Hopping: Double-Scaled Potential Profile Model The Monte Carlo simulation procedure of the phonon-assisted exciton hopping over the localized states distributed randomly in space was similar to that described in [30,35]. The hopping probability from a localized state ito any other state j separated by the distance ru was defined by MillerAbrahams expression (1) where E; and E1 denote energies of initial and final states, respectively, v0 is the attempt-to-escape frequency, and a is the characteristic decay length of the exciton wave function.
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UV Solid-State Light Emitters and Detectors by M. S. Shur, A. Žukauskas (auth.), Michael S. Shur, Artūras Žukauskas (eds.)