The MOCVD Challenge: A survey of GaInAsP-InP and by Manijeh Razeghi PDF


By Manijeh Razeghi

ISBN-10: 1439806985

ISBN-13: 9781439806982

Written by means of one of many riding forces within the box, The MOCVD problem is a complete evaluation masking GaInAsP–InP, GaInAsP–GaAs, and comparable fabric for digital and photonic equipment functions. those III-V semiconductor compounds were used to achieve the digital, optoelectronic, and quantum units that experience revolutionized telecommunications. The determine at the again conceal provides the power hole and lattice parameter for the complete compositional variety of the binary, ternary, and quaternary mixtures of those III-V components. by means of figuring out the fabric and studying to manage the expansion new units develop into attainable: front conceal exhibits the world’s first InP/GaInAs superlattice that was once fabricated via the writer — this has long gone directly to be the foundation of recent quantum units like quantum cascade lasers and quantum dot infrared photodetectors. Now in its moment variation, this up-to-date and mixed quantity comprises the secrets and techniques of MOCVD progress, fabric optimization, and glossy equipment know-how. It starts with an creation to semiconductor compounds and the MOCVD development procedure. It then discusses in situ and ex situ characterization for MOCVD progress. subsequent, the ebook examines intimately the specifics of the expansion of GaInP(As)-GaAs and GaInAs(P)-InP fabric platforms. It examines MOCVD development of assorted III-V heterojunctions and superlattices and discusses digital and optoelectronic units learned with this fabric. Spanning 30 years of analysis, the ebook is the definitive source on MOCVD.

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Extra info for The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Electronic Materials and Devices)

Example text

Kobayashi et al. [1985] introduced a small amount of AsH3 during the TEGa exposure step in order to grow η-type GaAs films. They called this technique flow-rate modulation epitaxy (FME). The major advantages of ALE, especially digital ALE, where the thickness grown is insensitive to any analog quantities such as source gas pressure, growth temperature and growth time, is the ability to obtain large-area growth with monolayer control of thickness and composition. (g) Migration-enhanced epitaxy Rapid migration of the evaporated materials on the growing surface is essential to the growth of high-quality epitaxial layers.

ScL Technol. 21 469, 1982. C. The Technology and Physics of Molecular Beam Epitaxy (New York: Plenum), 1985. W. Appl. Phys. Lett. 55 1888, 1989 Razeghi, M. Rev. Tech. Thomson-CSF 15 1, 1983. Razeghi, M. Lightwave Technology for Communication ed. T. Tsang (New York: Academic), 1985 Razeghi, M. and Duchemin J P J. Crystal Growth 70 145, 1984. J. and Briggs, A. Appl. Phys. Lett. 48 712, 1986. P. Electron. Lett. P. Electron. Lett. , and Voos, M. Appl. Phys. Lett. , and Decoster, D. Gallium Arsenide and Related Compounds (Bristol: Institute of Physics) ρ 625, 1987.

Schematic diaagram of an MOCVD laminar annd mixed flow zones. z Growth Technology 33 In order to specify the circumstances in which the different types of flow occur, we need to introduce the concept of the Reynolds number for the first case and the Rayleigh number for the second case. The Reynolds number Re (dimensionless) of reactor flow is Eq. 3 ) Re ρVd / η where d is the diameter of the tube (m), V the average flow-rate (m·s−1), ρ the density (kg·m−3) and η the dynamic viscosity (kg·m−1·s−1) of the gas.

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The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (Electronic Materials and Devices) by Manijeh Razeghi

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