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Additional resources for High Data Rate Transmitter Circuits: RF CMOS Design and Techniques for Design Automation

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6 the voltage transfer functions of the amplifier are shown; for the construction-based RF model drawn in full and for the fit-model from the silicon foundry drawn in dashed line. 2 with a gate length of and on the right for nMOS transistors M2a and M2b with a gate length of As can be seen, the construction-based model fits rather well to the measurement-based foundry model for frequencies up to 10 GHz for a gate length of and up to 6 GHz for a gate length of Of course, this comparison is far from complete since the use of the transistor in a totally different circuit could show shortcomings of the model that do not show up in this circuit.

2 the code of a typical input file for FastHenry is given. It consists of three parts: a file header‚ a middle part that defines the placement of nodes and segments and the file footer. The code in the header sets the units to micron‚ and issues default values for some parameters of the coil segments: the value of the height above the substrate is set at sigma is the equivalent conductivity of the virtual metal layer; h is the thickness of the virtual metal layer; the parameters nhinc‚ nwinc and rw define how the segments are subdivided in filaments.

The whole process of model generation‚ both for the simple and distributed model‚ can be completely automated‚ and this will be used in a tool for the automated design of LC-type VCO’s‚ as described in Chapter 3. 4 RF Modeling‚ Quadrature Generation and Flip-Chip Bonding Conclusion With the shift towards ever higher frequencies‚ the importance of good models for the design of first-time-right silicon is becoming higher and higher. In this section the construction of a subcircuit model for a MOSFET device has been described.

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