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Dispersion complex analysis and optical spectroscopy - download pdf or read online

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In measurement, a tunable laser source with a tuning range 1525–1575 nm was used as an input light source. Three wavelengths of λ1 = 1540 nm, λ2 = 1550 nm, and λ3 = 1560 nm were coupled to the input waveguides 1, 2, and 3, respectively. 35 Fabricated optical switch array on a 4-inch Si wafer. extinction ratio of the device were calculated. The insertion loss of the device is defined as 210 log10(Pout/Pin), where Pin is the input power, Pout is the output power. 98 dB, which includes total on-chip propagation and structure loss.

14 Output optical power versus the applied forward bias. 55 µm operation14. It is a 2 × 2 SiGe waveguide structure with an input Y branch and an output Y branch connected to an intersection region. 15 Near-field output intensity patterns observed by a vidicon at the end facets of the switch. © Woodhead Publishing Limited, 2010 Electro-optical switches 21 forward-bias into a region, which is called the carrier injection region. The injected carriers in this region diffuse and drift toward a collector which is located on the surface of the guiding layer and apart from the p-n+ junction for a distance of d.

55-µm optical signals with same original phase, amplitude, and polarization are coupled into the input ports A and B, respectively and without applying a forward-bias voltage to both the p-n junctions of regions I and II, the input signal coupled from the input port A will be switched to the output port 3 and the input light coupled from the input port B will be switched to the output port 1. In this case, the switch is at cross-state and functions as an optical crossconnection, as shown in Plate Va.

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