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Example text

In Digest of technical Papers. 1 Definition and Structure of a TSV The through-silicon via (TSV) is composed of a conductor, also named “nail” or “plug,” crossing the Si substrate of the stacked dies [1, 2], as shown in Fig. 1. The conductor [common material choices include copper (Cu), tungsten (W), and ­polysilicon] is electrically insulated from the substrate by a dielectric layer (usually SiO2) and interconnects the metal wires of the stacked dies. The geometry of the TSV conductor may vary depending on the 3D stacking technology.

Both the geometry and the equivalent circuit of the coupled TSVs are rather complex due to the cylindrical shape of TSVs and the semiconductor nature of the substrate between them, as shown in Fig. 9. The silicon substrate among the TSVs is connected to the ground; therefore, a few electric field lines would be originating from one TSV and terminating on the other, providing a minimal mutual capacitance between neighboring TSVs. , the TSV pitch). The crosstalk between two TSVs in the presence of a substrate contact, as shown in Fig.

In fact, a leaky TSV represents a waste of static energy toward the substrate, and a consequent potential voltage drop on interconnects that could violate the noise margins of the digital signals. The TSV should also withstand potential overstresses caused by ESD-EMI events without being damaged and becoming leaky. One of the potential contributing factors to the TSV leakage and breakdown is the lack of uniformity of the insulator layer thickness: local reduction of oxide thickness increases locally the electric field between the plug and the substrate, thus increasing the possibility of leakage and breakdown.

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